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VLMW82..
Vishay Semiconductors
Power SMD LED CLCC-2 Flat
FEATURES * Utilizing InGaN technology * Very low thermal resistance, high optical power e4 * Optical efficiency 40 lm/W at 100 mA * Luminous intensity and color grouping * Luminous intensity ratio per package unit IVmax/IVmin 1.6 * ESD-withstand voltage: up to 1 kV according to JESD22-A114-B * Compatible with IR reflow solder processes according to CECC 00802 and J-STD-020C * Lead (Pb)-free device * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC * Preconditioning: acc. to JEDEC level 4 * Automotive qualified AEC-Q101 * Very flat package (0.75 mm) APPLICATIONS * Camera flash light * Interior and exterior automotive lighting: brake lights, turn lights, backlighting, side markers * Indicator lighting * Signal and symbol luminaire * Marker lights * Dashboard illumination
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DESCRIPTION The VLMW82.. is one of the most robust and light efficient LEDs in the market. The small size and wide viewing angle make these LEDs a prime choice for backlighting applications and front panel indicators, especially where space is at a premium. Its ceramic package makes it the ideal light source in applications of high thermal considerations allowing the additional current drive for a maximum light output while maintaining a high service life of up to 50K h. The reflector inside this package is filled with a mixture of silicone and TAG phosphor. The TAG phosphor converts the blue emission partially to yellow, which mixes with the remaining blue to white. PRODUCT GROUP AND PACKAGE DATA * Product group: LED * Package: SMD CLCC-2 flat * Product series: power * Angle of half intensity: 60 PARTS TABLE
PART VLMW82EBFB-08 VLMW82EBFB-18 COLOR, LUMINOUS INTENSITY (at IF = 500 mA) White, IV = (9000 to 18 000) mcd White, IV = (9000 to 18 000) mcd
LUMINOUS FLUX (TYP.) 35 000 mlm 35 000 mlm
TECHNOLOGY InGaN/TAG InGaN/TAG
Document Number 81872 Rev. 1.0, 05-May-08
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VLMW82..
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS 1) VLMW82..
PARAMETER Forward current Power dissipation Junction temperature Surge current t < 10 s, d = 0.1 Operating temperature range Storage temperature range Thermal resistance junction/pin Note: Not designed for reverse operation 1) T amb = 25 C, unless otherwise specified Metal core pcb 960 mm per LED TEST CONDITION SYMBOL IF Ptot Tj IFM Tamb Tstg RthJP VALUE 500 2150 + 125 1000 - 40 to + 100 - 40 to + 100 20 UNIT mA mW C mA C C K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS 1) VLMW82.., WHITE
PARAMETER Luminous intensity Luminous flux calculated Chromaticity coordinate x acc. to CIE 1931 Chromaticity coordinate y acc. to CIE 1931 Angle of half intensity Forward voltage Temperature coefficient of VF Temperature coefficient of IV Note: Not designed for reverse operation 1) T amb = 25 C, unless otherwise specified TEST CONDITION IF = 500 mA IF = 500 mA IF = 500 mA IF = 500 mA IF = 500 mA IF = 500 mA IF = 500 mA IF = 500 mA PART VLMW82EBFB VLMW82EBFB SYMBOL IV V x y VF TCVF TCIV 2.9 MIN. 9000 28 000 0.33 0.33 60 3.6 -3 - 0.4 4.3 deg V mV/K %/K TYP. MAX. 18 000 56 000 UNIT mcd mlm
LUMINOUS INTENSITY/FLUX CLASSIFICATION WHITE
GROUP STANDARD EB FA FB MIN. 9000 11 200 14 000 LUMINOUS INTENSITY IV (mcd) MAX. 11 200 14 000 18 000
Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. The above type Numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, each single wavelength group is packed in a single reel. In order to ensure availability, single wavelength groups can not be ordered.
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Document Number 81872 Rev. 1.0, 05-May-08
VLMW82..
Vishay Semiconductors
FORWARD VOLTAGE CLASSIFICATION
GROUP 3 4 FORWARD VOLTAGE (V) MIN. 2.9 3.5 MAX. 3.5 4.3
Note: Forward voltages are tested at a current pulse duration of 25 ms and a tolerance of 0.1 V. In order to ensure availability, a single forward voltage group can not be ordered.
CHROMATICITY COORDINATED GROUPS FOR WHITE SMD LED
X 0.272 5 0.303 0.313 0.296 0.300 6 0.330 0.330 0.313 Y 0.302 0.329 0.284 0.259 0.345 0.370 0.310 0.284 8 7 X 0.330 0.349 0.343 0.330 0.349 0.367 0.360 0.343 Y 0.370 0.385 0.330 0.310 0.385 0.401 0.357 0.330
Note: Chromaticity coordinate groups are tested at a current pulse duration of 25 ms and a tolerance of 0.01.
TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified
600 1000
IF - Forward Current (mA)
500 400 300 200 100 0 0 20 40 60 80 100 120
IF - Forward Current (mA)
100
10
1
21350
TSP - Solder Point Temperature (C)
Figure 1. Permissible Forward Current vs. Solder Point Temperature
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2.0
2.4
2.8
3.2
3.6
4.0
4.4
VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
Document Number 81872 Rev. 1.0, 05-May-08
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VLMW82..
Vishay Semiconductors
x,y - Change of x,y-Coordinates (ccd)
1.2 0.04 0.03 0.02 0.01 x 0 - 0.01 - 0.02 - 0.03 - 0.04 0
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IV rel - Relative Luminous Intensity
1.0 0.8 0.6 0.4 0.2 0 0 100 200 300 400 500 600
y
100
200
300
400
500
600
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IF - Forward Current (mA)
IF - Forward Current (mA)
Figure 3. Relative Luminous Intensity vs. Forward Current
Figure 6. Change of x, y-Coordinates vs. Forward Current
1.2 1.0
VF - Change of Forward Voltage (mV)
500 400 300 200 100 0 - 100 - 200 - 300 - 400 - 500 - 50 - 25 0 25 50 75 100 125
Irel - Relative Intensity
0.8 0.6 0.4 0.2 0 400 450 500 550 600 650 700 750 800
21226
- Wavelength (nm)
21352
Tamb - Ambient Temperature (C)
Figure 4. Relative Intensity vs. Wavelength
Figure 7. Change of Forward Voltage vs. Ambient Temperature
0
10
20
IV rel - Relative Luminous Intensity
IV rel - Relative Luminous Intensity
30
2.0
- Angular Displacement
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 - 50 - 25 0 25 50 75 100 125
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0
95 10319
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Tamb - Ambient Temperature (C)
Figure 5. Rel. Luminous Intensity vs. Angular Displacement
Figure 8. Relative Luminous Intensity vs. Ambient Temperature
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Document Number 81872 Rev. 1.0, 05-May-08
VLMW82..
Vishay Semiconductors
x, y - Change of x, y - Coordinates (ccd)
0.05 0.04 0.03 y x
0.43 0.41 0.39
0.01 0 - 0.01 - 0.02 - 0.03 - 0.04 - 0.05
y-Coordinates
0.02
0.37 0.35 0.33 0.31 0.29 0.27 0.25 5 6 7
8
- 50 - 25
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0
25
50
75
100 125
0.23 0.25 0.27 0.29 0.31 0.33 0.35 0.37 0.39
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Tamb - Ambient Temperature (C)
x-Coordinates
Figure 9. Change of x - Coordinates vs. Ambient Temperature
Figure 10. Coordinates of Colorgroups
TAPING DIMENSIONS in millimeters
20869
Document Number 81872 Rev. 1.0, 05-May-08
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VLMW82..
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
21223
SOLDERING PROFILE
IR Reflow Soldering Profile for Lead (Pb)-free Soldering
Preconditioning acc. to JEDEC level 4
300 250 Temperature (C) 200 max. 30 s 150 max. 120 s 100 50 0 0
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255 C 240 C 217 C
max. 260 C 245 C
max. 100 s
max. ramp up 3 C/s
max. ramp down 6 C/s
50
100
150 Time (s)
200
250
300
max. 2 cycles allowed
Figure 11. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020C)
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Document Number 81872 Rev. 1.0, 05-May-08
VLMW82..
Vishay Semiconductors
BAR CODE PRODUCT LABEL EXAMPLE: RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: * Storage temperature 10 C to 30 C * Storage humidity 60 % RH max. After more than 72 h under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 C + 5 C/- 0 C and < 5 % RH (dry air/nitrogen) or 96 h at 60 C + 5 C and < 5 % RH for all device containers or 24 h at 100 C + 5 C not suitable for reel or tubes. An EIA JEDEC standard JESD22-A112 level 4 label is included on all aluminum dry bags.
LEVEL
A
E
D
B
C
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A) Type of component B) Manufacturing plant C) SEL - selection code (bin): e.g.: DA = code for luminous intensity group 5 = code for color group 4 = code for forward voltage D) Batch: 200707 = year 2007, week 07 PH19 = plant code E) Total quantity DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
CAUTION
This bag contains MOISTURE-SENSITIVE DEVICES
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1. Shelf life in sealed bag: 12 months at < 40 C and < 90 % relative humidity (RH) 2. After this bag is opened, devices that will be subjected to soldering reflow or equivalent processing (peak package body temp. 260 C) must be 2a. Mounted within 72 hours at factory condition of < 30 C/60 % RH or 2b. Stored at < 5 % RH 3. Devices require baking befor mounting if: Humidity Indicator Card is > 10 % when read at 23 C 5 C or 2a. or 2b. are not met. 4. If baking is required, devices may be baked for: 192 hours at 40 C + 5 C/- 0 C and < 5 % RH (dry air/nitrogen) or 96 hours at 60 C 5 C and < 5 % RH for all device containers or 24 hours at 125 C 5 C not suitable for reels or tubes Bag Seal Date:
(If blank, see barcode label) Note: Level and body temperature defined by EIA JEDEC Standard JSTD-020
Aluminum bag
Example of JESD22-A112 level 4 label
Label
Reel
15973
ESD PRECAUTION Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag. Electro-static sensitive devices warning labels are on the packaging. VISHAY SEMICONDUCTORS STANDARD BAR CODE LABELS The Vishay Semiconductors standard bar code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data.
FINAL PACKING The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes.
Document Number 81872 Rev. 1.0, 05-May-08
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VLMW82..
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. The IEC/EN standards require that the desired classification Accessible Emission Limit shall not be exceeded in "Normal" and "Single Fault Conditions". This product is in Compliance with the requirement in CEN/IEC/EN60825-1 to ensure that required classifications are not exceeded in single fault conditions.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 81872 Rev. 1.0, 05-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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